6．J型场效应管J-FET测试参数名称电压范围电流范围分辨率精度IGSSIDOFFIDGOVGS:0.10V-20V(80V)2VDS:0.10V-999V1nA(20pA)1-3A1nA(20pA)1-50mA1nA(1pA)11%+10nA+20pA/V(1%+200pA+2pA/V)1BVDGOBVGSS0.10V-2kV0.10V-20V(80V)21nA-50mA1nA-3A1mV1%+100mV1%+10mVVDSON，VGSONIDSS，IDSON***ON(混合参数)gFS(混合参数)0.10V-5.00V-9.99VID:10uA-50A(1250A)3-25A(750A)3IG:1nA-10A1mVV:1%+10mVID:1%+1nAIG:1%+5nAVGSOFF0.10V-20V(80V)2ID:1nA(20pA)2-3AVD:0.10V-50V1mV1%＋10mV7．MOS场效应管MOS-FET测试参数名称电压范围电流范围分辨率精度IDSS/VIGSSFIGSSRVGSFVGSR0.10V-2kV0.10V-20V(80V)21nA(20pA)1-50mA1nA(20pA)1-3A1nA(1pA)11%+10nA+20pA/V(1%+200pA+2pA/V)1BVDSS0.10V-2kV1nA-50mA1mV1%+100mVVGSTH0.10V-49.9VID:100uA-3A1mV1%+10mVVDSON、VF(VSD)IDON、VGSON***ON(混合参数)gFS(混合参数)VDVF:0.10V-5.00V-9.99VVGS:0.10V-9.99VIFID:10uA-50A(1250A)3-25A(750A)3IG:1nA-10A1mVV:1%+10mVIF.ID:1%+1nAIG：1%+5nA8．双向可控硅开关器件（双向晶闸管）Triac测试参数名称电压范围电流范围分辨率精度IDRMIRRMIGKO0.10V-2kV0.10V-20V(80V)21nA(20pA)1-50mA1nA(20pA)1-3A1nA(1pA)11%+10nA+20pA/V(1%+200pA+2pA/V)1VD+、VD-BVGKO0.01V-2kV0.10V-20V(80V)21nA-50mA1nA-3A1mV1%+100mV1%+10mVVT+VT-0.10V-5.00V-9.99V10uA-50A(1250A)3-25A(750A)3IGT:1nA-10A1mVV:1%+10mVIT:1%+1nAIGT:1%+5nAIGT1/2/3/4VGT1/2/3/4VGT:0.10V-20V(80V)2VT:100mV-49.9VIGT:1nA-3ARL:12Ω/30Ω/100Ω/EXT1mV1nA1%＋10mV1%＋5nAIL+、IL-(间接参数)VD:5V-49.9VIL:100μA-3AIGT:1nA-3ARL:12Ω/30Ω/100Ω/EXTN/AN/AIH+、IH-VD:5V-49.9VIH:10uA-1.5AIGT:1nA-3ARL:12Ω/30Ω/100Ω/EXT(IAK初值由RL设置)1uA1%+2uA9．压变电阻VARIS-R测试参数名称电压范围电流范围分辨率精度ID+ID-VD:2.5mV-2kV1nA-3A1uA1%+4nA+10pA/V(1%+4nA+10pA)1V:1%+1%量程VC+VC-100mV-10V1nA-49.9A1mV1%+10mV10．金属氧化物压变电阻MOV测试参数名称电压范围电流范围分辨率精度ID+ID-2.50mV-100V1nA(20pA)1-3A1nA(1pA)11%+10nA+20pA/V(1%+200pA+2pA/V)1VN+VN-VC+VC-0.10V-900V-1.4kV-1.6kV-2kV1nA(20pA)1-200mA1mV1%+1%量程)