中子嬗变单晶硅片
NTDSingleCrystalSiliconWafer2”3”NeutronTran***utationDoping(NTD)siliconsinglecrystalFZN(111)50.8+/-0.1,76.2+/-0.2mmThickness356+/-10,673+/-10umResisitivity42-50,40-180ohm-cmRRV8%max,BOW30ummax,FlatSEMISTDLappedFO-800(JISStandard)-corundumasgrindingmedium.25pcsinonecassette,cartonboxoutside)