Theexistingenablingprocesshasbeenabletoproducehigh-qualitydielectricoxidefilms,anddifferentdielectricoxidefilmscanbemadeaccordingtodifferentrequirements,forexample,forDCcapacitors,γandγ'-typecrystallinealuminafilmscanbemade.ForACcapacitors,theyareamorphousfilms.Thegreatestdevelopmentofthetechnologyisthatthealuminumhydroxidefilmcanbetransformedintothedielectricaluminafilmandthewaterprooflayercanbeformedonthesurfaceofthealuminumhydroxidefilm.Inaddition,itcaneliminatethedefectsandcracksofthedielectricfilm.Structurally)