CMPA801B025订货13632767652黄小姐微信同号】CMPA801B025产品介绍CMPA801B025报价CMPA801B025代理CMPA801B025咨询***CMPA801B025现货CMPA801B025Cree’sCMPA801B025isagalliumnitride(GaN)HighElectronMobilityTransistor(HEMT)basedmonolithicmicrow***eintegratedcircuit(MMIC).GaNhassuperiorpropertiescomparedtosiliconorgalliumarsenide,includinghigherbreakdownvoltage,highersaturatedelectrondriftvelocityandhigherthermalconductivity.GaNHEMTsalsooffergreaterpowerdensityandwiderbandwidthscomparedtoSiandGaAstransistors.ThisMMICis***ailableina10-leadmetal/ceramicflangedpackage(CMPA801B025F)or***allformfactorpillpackage(CMPA801B025P)foroptimalelectricalandthermalperformance.CIEE的CMPA801B025是氮化***（GaN）高电子迁移率。基于晶体管（HEMT）的单片微波集成电路（MMIC）。与硅或***化***相比，GaN具有优异的性能，包括击穿电压越高，饱和电子漂移速度越高热导率。GaNHEMT还提供更大的功率密度和更宽的功率密度。与Si和GaAs晶体管相比的带宽。此MMIC可供使用。10引线金属/陶瓷法兰封装（CMPA801B025F）或小形状因数药丸包装（CMPA801B025P），以获得***佳的电性能和热性能。)