F3L75R12W1H3，Infineon英飞凌IGBT模块F3L75R12W1H3，Infineon英飞凌IGBT模块F3L75R12W1H3，Infineon英飞凌IGBT模块F3L75R12W1H3，Infineon英飞凌IGBT模块F3L75R12W1H3，Infineon英飞凌IGBT模块F3L75R12W1H3_B27F3L75R12W1H3_B27F3L75R12W1H3_B27F3L75R12W1H3_B27F3L75R12W1H3_B27F3L75R12W1H3_B27F3L75R12W1H3_B27F3L75R12W1H3_B27F3L75R12W1H3_B27F3L75R12W1H3_B27F3L75R12W1H3_B27F3L75R12W1H3_B27F3L75R12W1H3_B27F3L75R12W1H3B27F3L75R12W1H3B27F3L75R12W1H3B27F3L75R12W1H3B27F3L75R12W1H3B27F3L75R12W1H3B27F3L75R12W1H3F3L75R12W1H3F3L75R12W1H3F3L75R12W1H3F3L75R12W1H3F3L75R12W1H3制造商:Infineon产品种类:IGBT模块RoHS:详细信息产品:IGBTSiliconModules配置:3-Phase集电极—发射极***大电压VCEO:1.2kV集电极—射极饱和电压:1.45V在25C的连续集电极电流:45A栅极—射极漏泄电流:100nAPd-功率耗散:275W封装/箱体:EasyPack1B***小工作温度:-40C***大工作温度:+150C封装:Tray商标:InfineonTechnologies安装风格:Clamp栅极/发射极***大电压:+/-20V产品类型:IGBTModules工厂包装数量:24子类别:IGBTs零件号别名:F3L75R12W1H3B27)