B***150GB120DN2，Infineon英飞凌IGBT模块B***150GB120DN2，Infineon英飞凌IGBT模块B***150GB120DN2，Infineon英飞凌IGBT模块B***150GB120DN2，Infineon英飞凌IGBT模块B***150GB120DN2，Infineon英飞凌IGBT模块B***150GB120DN2，Infineon英飞凌IGBT模块B***150GB120DN2，Infineon英飞凌IGBT模块B***150GB120DN2，Infineon英飞凌IGBT模块B***150GB120DN2，Infineon英飞凌IGBT模块B***150GB120DN2B***150GB120DN2B***150GB120DN2B***150GB120DN2B***150GB120DN2B***150GB120DN2B***150GB120DN2B***150GB120DN2制造商:Infineon产品种类:IGBT模块RoHS:详细信息产品:IGBTSiliconModules配置:HalfBridge集电极—发射极***大电压VCEO:1200V集电极—射极饱和电压:2.5V在25C的连续集电极电流:210A栅极—射极漏泄电流:320nAPd-功率耗散:1.25kW封装/箱体:HalfBridge2***小工作温度:-40C***大工作温度:+150C封装:Tray高度:30mm长度:106.4mm宽度:61.4mm商标:InfineonTechnologies安装风格:ChassisMountCNHTS:8541290000HTSCode:8541290095栅极/发射极***大电压:20VMXHTS:85412999产品类型:IGBTModules工厂包装数量:10子类别:IGBTs制造商:Infineon产品种类:IGBT模块RoHS:详细信息产品:IGBTSiliconModules配置:HalfBridge集电极—发射极***大电压VCEO:1200V集电极—射极饱和电压:2.5V在25C的连续集电极电流:210A栅极—射极漏泄电流:320nAPd-功率耗散:1.25kW封装/箱体:HalfBridge2***小工作温度:-40C***大工作温度:+150C封装:Tray高度:30mm长度:106.4mm宽度:61.4mm商标:InfineonTechnologies安装风格:ChassisMountCNHTS:8541290000HTSCode:8541290095栅极/发射极***大电压:20VMXHTS:85412999产品类型:IGBTModules工厂包装数量:10子类别:IGBTs)